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Кремниевый карбид Кристл

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Китай 100.0mm Silicon Carbide Crystal 4

100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
Выделять:Silicon Carbide Crystal P Grade, single crystal silicon carbide, Silicon Carbide Crystal 4H
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabricati... Посмотреть больше
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Китай JDZJ01-001-002 SiC Ingot Crystal 4

JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of SiC. SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperatu... Посмотреть больше
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Китай JDZJ01-001-006 SiC Seed Crystal S Grade 6

JDZJ01-001-006 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
SiC seed crystal S grade 6" S grade φ153±0.5mm SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric field enables the fabrication of very high-voltage, high-power devices such ... Посмотреть больше
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Китай JDZJ01-001-008 4 и 6-дюймовый затравочный кристалл SiC продается

JDZJ01-001-008 4 и 6-дюймовый затравочный кристалл SiC

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
JDZJ01-001-008 4&6inch SiC Seed crystal The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high- power/high-frequency electronic devices. SiC can withstand a voltage gradient (o... Посмотреть больше
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Китай JDZJ01-001-007 Silicon Carbide Seed Crystal продается

JDZJ01-001-007 Silicon Carbide Seed Crystal

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows SiC to emit and detect short wavelength light which makes the fabr... Посмотреть больше
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Китай JDZJ01-001-005 SiC Seed Crystal S Grade 6

JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
SiC seed crystal S grade 6" S grade φ153±0.5mm SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any metal. This property enables SiC devices to operate at e... Посмотреть больше
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Китай JDZJ01-001-004 Кристалл SiC в слитках 6 дюймов, класс P продается

JDZJ01-001-004 Кристалл SiC в слитках 6 дюймов, класс P

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. SiC can b... Посмотреть больше
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Китай 4

4" удельное сопротивление 0.015ohm.cm кристалла кремниевого карбида ранга p к 0.028ohm.cm

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
Выделять:P Grade Silicon Carbide Crystal, crystalline silicon carbide 0.028ohm.Cm, 4" Silicon Carbide Crystal
4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor materials. In fact, at room temperature, SiC has a higher thermal conductivity than any ... Посмотреть больше
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Китай 4H Politype Single Crystal Silicon Carbide 4

4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
Выделять:single crystal silicon carbide 4", N type crystalline silicon carbide, single crystal silicon carbide Si face
JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high- power/hig... Посмотреть больше
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Китай 100.0mm Silicon Carbide Crystal 4

100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
Выделять:100.0mm Silicon Carbide Crystal, single crystal sic 4", Silicon Carbide Crystal 18.0mm
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows ... Посмотреть больше
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Китай 0.015ohm.cm до 0.028ohm.cm кристалл карбида кремния типа N продается

0.015ohm.cm до 0.028ohm.cm кристалл карбида кремния типа N

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
Выделять:0.015ohm.cm Silicon Carbide Crystal, N Type sic crystal, Silicon Carbide Crystal 32.5mm
0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon carbide grain or powder, specially manufactured to achieve extremely low levels of impurities. It is used to measure the impurities within SiC C... Посмотреть больше
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Китай Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Цена: Negotiable
MOQ: Negotiable
Срок поставки: 3-4 week days
Выделять:32.5mm Silicon Carbide Crystal, SiC Seed Crystal 100.0mm, Silicon Carbide Crystal 4"
Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) over eight times greater than than Si or GaAs without undergoing avalanche breakdown. This high breakdown electric... Посмотреть больше
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